Christophe Marcadal
37Patents
19h-index
46Co-inventors
81Inventor score
Filing activity: Jul 21, 1998 → Jun 9, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6498091B1 | Method of using a barrier sputter reactor to remove an underlying barrier layer | Electricity | 520 | Expired |
| US6110530A | CVD method of depositing copper films by using improved organocopper precursor blend | Chemistry; Metallurgy | 245 | Expired |
| US6607976B2 | Copper interconnect barrier layer structure and formation method | Electricity | 241 | Expired |
| US6660622B2 | Process for removing an underlying layer and depositing a barrier layer in one reactor | Electricity | 107 | Expired |
| US6905541B2 | Method and apparatus of generating PDMAT precursor | Emerging Cross-Sectional Technologies | 85 | Expired |
| US7241686B2 | Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA | Electricity | 83 | Expired |
| US7026238B2 | Reliability barrier integration for Cu application | Electricity | 78 | Expired |
| US6953742B2 | Tantalum barrier layer for copper metallization | Electricity | 63 | Expired |
| US6562715B1 | Barrier layer structure for copper metallization and method of forming the structure | Electricity | 60 | Expired |
| US7524762B2 | Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA | Electricity | 59 | Active |
| US7850779B2 | Apparatus and process for plasma-enhanced atomic layer deposition | Electricity | 51 | Active |
| US6596643B2 | CVD TiSiN barrier for copper integration | Electricity | 41 | Expired |
| US6596085B1 | Methods and apparatus for improved vaporization of deposition material in a substrate processing system | Performing Operations; Transporting | 39 | Expired |
| US7270709B2 | Method and apparatus of generating PDMAT precursor | Emerging Cross-Sectional Technologies | 36 | Expired |
| US7682946B2 | Apparatus and process for plasma-enhanced atomic layer deposition | Electricity | 35 | Active |
| US7265048B2 | Reduction of copper dewetting by transition metal deposition | Electricity | 35 | Expired |
| US7244683B2 | Integration of ALD/CVD barriers with porous low k materials | Electricity | 35 | Expired |
| US6358323B1 | Method and apparatus for improved control of process and purge material in a substrate processing system | Chemistry; Metallurgy | 33 | Expired |
| US6958296B2 | CVD TiSiN barrier for copper integration | Electricity | 33 | Expired |
| US7833358B2 | Method of recovering valuable material from exhaust gas stream of a reaction chamber | Emerging Cross-Sectional Technologies | 16 | Active |
| US7524374B2 | Method and apparatus for generating a precursor for a semiconductor processing system | Emerging Cross-Sectional Technologies | 16 | Expired |
| US7597758B2 | Chemical precursor ampoule for vapor deposition processes | Emerging Cross-Sectional Technologies | 12 | Active |
| US7576002B2 | Multi-step barrier deposition method | Electricity | 11 | Expired |
| US9032906B2 | Apparatus and process for plasma-enhanced atomic layer deposition | Electricity | 9 | Active |
| US6455421B1 | Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition | Electricity | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.