Method and apparatus for monitoring the process state of a semiconductor device fabrication process
US6455437B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 1999 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Apr 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for monitoring process state using plasma attributes are provided. Electromagnetic emissions generated by a plasma are collected, and a detection signal having at least one frequency component is generated based on the intensity of the collected electromagnetic emissions; or, the RF power delivered to a wafer pedestal is monitored and serves as the detection signal. The magnitude of at least one frequency component of the detection signal then is monitored over time. By monitoring the magnitude of at least one frequency component of the detection signal over time, a characteristic fingerprint of the plasma process is obtained. Features within the characteristic fingerprint provide process state information, process event information and process chamber information. In general, any chemical reaction having an attribute that varies with reaction rate may be similarly monitored.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.