Gate stack structure with conductive silicide segment that has substantially etched nitride and/or oxynitride defects protruding from its sidewalls
US6455906B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2000 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Dec 15, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metal nitride and metal oxynitride extrusions often form on metal silicides. These extrusions can cause short circuits and degrade processing yields. The present invention discloses a method of selectively removing such extrusions. In one embodiment, a novel wet etch comprising an oxidizing agent and a chelating agent selectively removes the extrusions from a wordline in a memory array. In another embodiment, the wet etch includes a base that adjusts the pH of the etch to selectively remove certain extrusions relative to other substances in the wordline. Accordingly new metal silicide structures can be used to form novel wordlines and other types of integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.