Method for fabricating an integrated circuit, in particular an antifuse

US6458631B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Axel Brintzinger · Fishkill, US
• Ulrich Frey · Dresden, DE
• Jürgen Lindolf · Friedberg, DE
• Dominique Savignac · Ismaning, DE
• Stefan Dankowski · Hersbruck, DE
• Matthias Lehr · Dresden, DE
• Jochen Müller · Hersbruck, DE
• Kamel Ayadi · Puchheim, DE

Key dates

• Filing date: Feb 19, 2002
• Grant date: Oct 1, 2002
• Expiry date: Feb 19, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention provides a method for fabricating an integrated circuit, comprising the following steps: preparing a circuit substrate (1); providing a metallization region (10a) comprising a first metal in the circuit substrate (1); providing a first insulation layer (25) above the metallization region (10a); forming an opening (13) in the insulating layer (25) in order to uncover at least part of the surface of the metallization region (10a); depositing a functional layer (15′) above the resulting structure; depositing a second insulating layer (35) above the resulting structure, in such a manner that the opening (13) is filled; polishing-back of the second insulating layer (35) and of the functional layer (15′) in order to uncover the surface of the first insulating layer (25); forming a contact (11a′) in the second insulating layer (35) inside the opening (13) in order to make contact with the functional layer (15′); and providing an interconnect (40a) for electrical connection of the contact (11a′).