Method of providing a shallow trench in a deep-trench device
US6458671B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2001 |
| Grant date | Oct 1, 2002 |
| Priority date | — |
| Expiry date | Feb 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a shallow trench within a trench capacitor structure. This method can be used, for example, in the construction of a DRAM device. The method comprises: (1) providing a trench capacitor structure comprising (a) a silicon substrate having an upper and a lower surface; (b) first and second trenches extending from the upper surface into the silicon substrate; (c) first and second oxide regions lining at least portions of the first and second trenches; and (d) first and second polysilicon regions at least partially filling the oxide lined first and second trenches; and (2) forming a shallow trench from an upper surface of the structure, the shallow trench having a substantially flat trench bottom that forms an interface with portions of the silicon substrate, the first oxide region, the second oxide region, the first polysilicon region and the second polysilicon region, the shallow trench being formed by a process comprising (a) a first plasma etching step having an oxide:silicon:polysilicon selectivity of <1:1:1 and (b) a second plasma etching step having an oxide:silicon:polysilicon selectivity of >1:1:1, more preferably >1.3:1:1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.