Substrate support member for a processing chamber

US6464795B1 · kind B1 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Semyon Sherstinsky · San Francisco, US
• Calvin Augason · Los Altos, US
• Leonel A. Zuniga · San Jose, US
• Jun Zhao · Mianyang, CN
• Talex Sajoto · San Jose, US
• Leonid Selyutin · San Leandro, US
• Joseph Yudovsky · Campbell, US
• Maitreyee Mahajani · Saratoga, US
• Steve Ghanayem · Los Altos, US
• Tai T. Ngo · Dublin, US
• Arnold Kholodenko · San Francisco, US

Key dates

• Filing date: May 3, 2000
• Grant date: Oct 15, 2002
• Expiry date: May 3, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/68785
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A support member for supporting a substrate in a process chamber, the support member having a substrate support surface with one or more isolated recessed areas. A vacuum channel and a gas channel are formed in the support member along a common plane and are coupled to a vacuum source and gas source respectively. The gas channel comprises two or more concentrically disposed annular gas channels encompassing the vacuum channel. The vacuum channel is coupled to the support surface, and in particular to the one or more recessed areas, by a plurality of conduits. A portion of the conduits is disposed diametrically exterior to at least one of the annular gas channels and communicates with the vacuum channel via bypass channels.