Contamination controlling method and apparatus for a plasma processing chamber
US6464843B1 · kind B1 · utility
34Cited by
44References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 3, 1999 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Aug 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing chamber includes a substrate holder and a member of silicon carbide such as a liner, focus ring, perforated baffle or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize contamination during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the gas distribution plate to energize process gas into a plasma state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.