Silicon carbide barc in dual damascene processing
US6465889B1 · kind B1 · utility
20Cited by
7References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 7, 2001 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Feb 7, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The dimensional accuracy of trenches and, hence, the width of metal lines, in damascene interconnection structures is improved by employing silicon carbide as a capping layer/BARC on an underlying metal feature, e.g., Cu. Embodiments include via first-trench last dual damascene techniques employing a silicon carbide capping layer/BARC having an extinction coefficient (k) of about −0.2 to about −0.5, without the need for a middle etch stop layer, thereby improving efficiency by reducing the number of processing steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.