Semiconductor laser device
US6466597B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 1999 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Jun 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2009
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride semiconductor laser device includes an n-type contact layer of n-type GaN and an n-type cladding layer of n-type Al0.35Ga0.65N formed on a substrate of sapphire. On the n-type cladding layer, a multiple quantum well active layer of Al0.2Ga0.8N/Al0.25Ga0.75N, a p-type leak barrier layer of p-type Al0.5Ga0.5N0.975P0.025 and a p-type cladding layer of p-type Al0.4Ga0.6N0.98P0.02 are successively formed. The p-type leak barrier layer has a wider energy gap than the n-type cladding layer, and the p-type leak barrier layer and the p-type cladding layer include phosphorus for making an acceptor level shallow with keeping a wide energy gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.