Electrostatic charge reduction of photoresist pattern on development track
US6479820B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2000 |
| Grant date | Nov 12, 2002 |
| Priority date | — |
| Expiry date | Apr 25, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/405
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In one embodiment, the present invention relates to a method of processing a photoresist on a semiconductor structure, involving the steps of exposing and developing the photoresist; evaluating the exposed and developed photoresist to determine if negative charges exist thereon; contacting the exposed and developed photoresist with a positive ion carrier thereby reducing any negative charges thereon; and evaluating the exposed and developed photoresist with an electron beam. In another embodiment, the present invention relates to a system for processing a patterned photoresist on a semiconductor structure, containing a charge sensor for determining if charges exist on the patterned photoresist and measuring the charges; a means for contacting the patterned photoresist with a positive ion carrier to reduce the charges thereon; a controller for setting at least one of time of contact between the patterned photoresist and the positive ion carrier, temperature of the positive ion carrier, concentration of positive ions in the positive ion carrier, and pressure under which contact between the patterned photoresist and the positive ion carrier occurs; and a device for evaluating the patt…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.