Semiconductor integrated circuit and method of fabricating the same
US6483136B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2000 |
| Grant date | Nov 19, 2002 |
| Priority date | — |
| Expiry date | Apr 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/318
Abstract
An active region (L) with a metal insulator semiconductor field effect transistor (MISFET) (Qs) formed therein for selection of a DRAM memory cell, which makes up a memory cell of the DRAM, is arranged to have an island-like pattern that linearly extends in an X direction on one principal surface of a semiconductor substrate (1). The memory-cell selection MISFET (Qs) has an insulated gate electrode (7) (word line WL) that extends along a Y direction on the principal surface of the semiconductor substrate (1) with the same width kept along the length thereof, which gate electrode is arranged to oppose another gate electrode (7) (word line WL) adjacent thereto at a prespecified distance or pitch that is narrower than said width. In addition, a bit line (BL) is provided overlying the memory-cell select MISFET (Qs) in a manner such that the bit line extends in the X direction on the principal surface of the semiconductor substrate (1) with the same width and opposes its neighboring bit line (BL) at a distance or pitch that is wider than said width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.