Semiconductor device structure with hydrogen-rich layer for facilitating passivation of surface states

US6483172B1 · kind B1 · utility

Assignees

• Siemens Aktiengesellschaft · DE
• International Business Machines Corporation · US

Inventors

• Donna R. Cote · Poughquag, US
• William J. Cote · Poughquag, US
• Son V. Nguyen · Irvine, US
• Markus Kirchhoff · Radeberg, DE
• Max G. Levy · South Burlington, US
• Manfred Hauf · Wappingers Falls, US

Key dates

• Filing date: Apr 28, 2000
• Grant date: Nov 19, 2002
• Expiry date: Apr 28, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process for fabricating a device including the step of forming a structure for facilitating the passivation of surface states is disclosed. The structure comprises an oxynitride layer formed as part of the device structure. The oxynitride facilitates the passivation of surface states when heated.