Method for manufacturing group III nitride compound semiconductor laser diodes
US6486068B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 8, 1998 |
| Grant date | Nov 26, 2002 |
| Priority date | — |
| Expiry date | Jan 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a laser diode using Group III nitride compound semiconductor comprising a buffer layer 2, an n+ layer 3, a cladding layer 4, an active layer 5, a p-type cladding layer 61, a contact layer 62, an SiO2 layer 9, an electrode 7 which is formed on the window formed in a portion of the SiO2 layer 9, and an electrode 8 which is formed on a portion of the n+ layer 3 by etching a portion of 4 layers from the contact layer 62 down to the cladding layer 4. One pair of opposite facets S of a cavity is formed by RIBE, and then the facets are etched by gas cluster ion beam etching using Ar gas. As a result, the facets S are flatted and the mirror reflection of the facets S is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.