CVD plasma assisted lower dielectric constant sicoh film
US6486082B1 · kind B1 · utility
39Cited by
16References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2001 |
| Grant date | Nov 26, 2002 |
| Priority date | — |
| Expiry date | Jun 18, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31909
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.