Low-voltage punch-through bi-directional transient-voltage suppression devices

US6489660B1 · kind B1 · utility

Assignee

• General Semiconductor, Inc. · US

Inventors

• Willem G. Einthoven · Montgomery, US
• Lawrence LaTerza · Miller Place, US
• Gary Horsman · Woodstock, US
• Jack Eng · Freeport, US
• Danny Garbis · Huntington, US

Key dates

• Filing date: May 22, 2001
• Grant date: Dec 3, 2002
• Expiry date: May 22, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/825

Abstract

A bi-directional transient voltage suppression device with symmetric current-voltage characteristics has a lower semiconductor layer of first conductivity type, an upper semiconductor layer of first conductivity type, and a middle semiconductor layer adjacent to and disposed between the lower and upper layers having a second opposite conductivity type, such that upper and lower p-n junctions are formed. The middle layer has a net doping concentration that is highest at a midpoint between the junctions. Furthermore, the doping profile along a line normal to the lower, middle and upper layers is such that, within the middle layer the doping profile on one side of a centerplane of the middle layer mirrors the doping profile on an opposite side. In addition, an integral of the net doping concentration of the middle layer taken over the distance between the junctions is such that breakdown, when it occurs, is punch through breakdown, rather than avalanche breakdown.