Polymers, resist compositions and patterning process
US6492090B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2001 |
| Grant date | Dec 10, 2002 |
| Priority date | — |
| Expiry date | May 16, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0045
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A polymer comprising units of formulas (1) and (2) and having a Mw of 1,000-500,000 is provided. R1 is H, CH3 or CH2CO2R3, R2 is H, CH3 or CO2R3, R3 is alkyl, R4 is H, alkyl, alkoxyalkyl or acyl, R5 is alkyl or aryl, Y is a divalent hydrocarbon group which may contain a hetero atom and which forms a ring with the carbon atom, Z is a trivalent hydrocarbon group, k is 0 or 1, and W is —O— or —(NR)— wherein R is H or alkyl. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV rays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.