Method for fabricating a patterned layer

US6495415B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Walter Hartner · Munich, DE
• Igor Kasko · Mennecy, FR
• Volker Weinrich · Paris, FR
• Frank Hintermaier · Hersbruck, DE
• Gunther Schindler · Hersbruck, DE
• Hermann Wendt · Grasbrunn, DE

Key dates

• Filing date: Dec 26, 2001
• Grant date: Dec 17, 2002
• Expiry date: Dec 26, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/033
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method for fabricating a patterned layer from a layer material. The method includes steps of: providing a substrate with at least one target region and at least one migration region; applying a layer material; adding a material to the layer material; and performing a heat treatment such that the layer material migrates from the migration region to the target region and a layer which is self-aligned and self-patterned with respect to the target region is formed. The method has the advantage that the layer material, which can often only be etched with difficulty, does not have to be patterned directly. The desired structure of the layer is predetermined by preliminarily structuring the substrate into a target region and a migration region, and is produced by the migration of the layer material as a result of the heat treatment.