Formation of metal oxide gate dielectric
US6495436B2 · kind B2 · utility
190Cited by
6References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2001 |
| Grant date | Dec 17, 2002 |
| Priority date | — |
| Expiry date | Feb 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Formation of a gate dielectric includes forming a metal oxide on at least a portion of the surface of the substrate assembly by electron beam evaporation. An ion beam is generated using an inert gas to provide inert gas ions for compacting the metal oxide during formation thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.