Plasma deposition apparatus and method with controller
US6501082B1 · kind B1 · utility
5Cited by
2References
16Claims
0Family size
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Inventors
Key dates
| Filing date | Mar 16, 2000 |
| Grant date | Dec 31, 2002 |
| Priority date | — |
| Expiry date | Mar 16, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32623
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A controlled plasma deposition system and method are provided including a vacuum vessel. An electron adding mass spectrometer is connected to a vacuum vessel for carrying out a gas treatment for a semi-conductor wafer. In the mass spectrometer, a gas in the vacuum vessel is incorporated, and electrons are added to the particles in the gas. Then the value of negative ions obtained by ionizing the particles, for example specific radicals, is measured. Once measured, the information is forwarded to a controller that may optimize the plasma deposition method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.