Patent · US Expired

Compensation component and method for fabricating the compensation component

US6504230B2 · kind B2 · utility

35Cited by

5References

5Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gerald Deboy · Klagenfurt, AT
Hans-Joachim Schulze · Taufkirchen, DE
Anton Mauder · Kolbermoor, DE
Helmut Strack · Hersbruck, DE

Key dates

Filing date	Mar 7, 2002
Grant date	Jan 7, 2003
Priority date	—
Expiry date	Mar 7, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/834
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A compensating component and a method for the production thereof are described. Compensating regions are produced by implanting sulfur or selenium in a p-conductive semiconductor layer or, are provided as p-conductive regions, which are doped with indium, thallium and/or palladium, in a cluster-like manner inside an n-conductive region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.