Method of manufacturing semiconductor devices with titanium aluminum nitride work function
US6506676B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2001 |
| Grant date | Jan 14, 2003 |
| Priority date | — |
| Expiry date | Dec 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing semiconductor devices forms a surface channel CMOSFET in the process of manufacturing a metal gate. The method forms a (TixAly)1-zNz film (where z ranges from about 0.0 to about 0.2) having a work function value ranging from about 4.2 to about 4.3 eV on a gate insulating film in a nMOS region, a (TixAly)1-zNz film (where z ranges from about 0.3 to about 0.6) having a work function value ranging from about 4.8 to about 5.0 eV on the gate insulating film in a pMOS region, thus implementing a surface channel CMOS device both in the nMOS region and the pMOS region. Therefore, the threshold voltage is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.