Light-insensitive resistor for current-limiting of field emission displays
US6507329B2 · kind B2 · utility
1Cited by
17References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2001 |
| Grant date | Jan 14, 2003 |
| Priority date | — |
| Expiry date | Jan 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.