Method of making trench-gated MOSFET having cesium gate oxide layer
US6509233B2 · kind B2 · utility
35Cited by
12References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2002 |
| Grant date | Jan 21, 2003 |
| Priority date | — |
| Expiry date | Mar 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Cesium is implanted into the gate oxide layer of a vertical trench-gated MOSFET. The cesium, which is an electropositive material, reduces the threshold voltage of the device and lowers the on-resistance by improving the accumulation region adjacent the bottom of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.