Method for detecting or repairing intercell defects in more than one array of a memory device
US6510533B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2000 |
| Grant date | Jan 21, 2003 |
| Priority date | — |
| Expiry date | Dec 26, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/401
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of testing and/or repairing a memory device having two arrays of memory cells arranged in rows and columns. Sense amplifiers shared by the arrays are selectively coupled by isolation transistors to the digit lines of respective columns in each array. The sense amplifiers and isolation transistors are controlled to sequentially writing known data bits to a plurality of rows in each of the arrays. The rows in the first and second arrays remain activated for a testing interval of sufficient duration to allow charge to transfer through any inter-cell defects between the cells in the activated rows and cells that are not in an activated row. Cells in each non-activated row are then read. Inter-cell defects may also be repaired by activating the rows in the first and second arrays in a manner that couples adjacent memory cells to digit lines having different complimentary voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.