Patent · US Expired

Field-effect-controlled transistor and method for fabricating the transistor

US6515319B2 · kind B2 · utility

9Cited by

9References

6Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Dietrich Widmann · Unterhaching, DE
Armin Wieder · Gauting, DE
Justus Kuhn · Birkenfeld, DE
Jens Lüpke · Hersbruck, DE
Jochen Müller · Hersbruck, DE
Peter Pöchmüller · Birkenfeld, DE
Michael Schittenhelm · Poing, DE

Key dates

Filing date	May 18, 2001
Grant date	Feb 4, 2003
Priority date	—
Expiry date	May 18, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/027
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

An active surface with a source area, a channel area and a drain area is provided in a semiconductor substrate. Each of the areas lie adjacent to a main surface of the semiconductor substrate. At least one trench is provided in the main surface of the semiconductor substrate. The trench is adjacent to the channel area and is situated in the gate electrode part. The gate electrode preferably has two opposite parts which are each adjacent to the channel area. The transistor is produced using standard process steps.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.