Magnetoresistive random access memory device and method of fabrication thereof

US6518071B1 · kind B1 · utility

Assignee

• Motorola, Inc. · US

Inventors

• Mark Durlam · Chandler, US
• Mark Deherrera · Tempe, US
• Kelly Kyler · Mesa, US
• Brian R. Butcher · Gilbert, US
• Gregory W. Grynkewich · Gilbert, US
• Steven M. Smith · Atlanta, US
• Charles Snyder · San Francisco, US
• Jon Slaughter · Tempe, US

Key dates

• Filing date: Mar 28, 2002
• Grant date: Feb 11, 2003
• Expiry date: Mar 28, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/01

Abstract

A method of fabricating a MRAM device with a taper comprising the steps of providing a substrate, forming a dielectric region with positioned on the substrate, patterning and isotropically etching through the dielectric region to the substrate to form a trench, depositing the MRAM device within the trench wherein the MRAM device includes a first ferromagnetic region with a width positioned on the substrate, a non-ferromagnetic spacer layer with a width positioned on the first ferromagnetic region, and a second ferromagnetic region with a width positioned on the non-ferromagnetic spacer layer wherein the taper is formed by making the width of the first ferromagnetic region greater than the width of the non-ferromagnetic spacer layer, and the width of the non-ferromagnetic spacer layer greater than the width of the second ferromagnetic region so that the first ferromagnetic region is separated from the second ferromagnetic region.