Rhodium-rich oxygen barriers

US6518610B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Haining Yang · Wappingers Falls, US
• Dan Gealy · Kuna, US
• Gurtej S. Sandhu · Boise, US
• Howard E. Rhodes · Boise, US
• Mark Visokay · Dallas, US

Key dates

• Filing date: Feb 20, 2001
• Grant date: Feb 11, 2003
• Expiry date: Feb 20, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/682
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A structure and method are disclosed for forming a capacitor for an integrated circuit. The capacitor includes a rhodium-rich structure, a rhodium oxide layer in direct contact with the rhodium-rich structure, a capacitor dielectric in direct contact with the rhodium oxide layer and a top electrode over the capacitor. The rhodium-rich structure can include rhodium alloys and the capacitor dielectric preferably has a high dielectric constant.