Semiconductor device with STI sidewall implant
US6521493B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | May 19, 2000 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | May 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76237
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of manufacturing the same are provided. A trench is formed in a semiconductor substrate. A thin oxide liner is preferably formed on surfaces of the trench. After formation of the oxide liner, first regions of the semiconductor substrate are masked, leaving second regions thereof exposed. N-type devices are to be formed in the first regions and p-type devices are to be formed in the second regions. N-type ions may then be implanted into sidewalls of the trenches in the second regions. The mask is stripped and formation of the semiconductor device may be carried out in a conventional manner. The n-type ions are preferably only implanted into sidewalls where PMOSFETs are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.