Self-aligned, magnetoresitive random-access memory (MRAM) structure utilizing a spacer containment scheme

US6521931B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Gurtej S. Sandhu · Boise, US
• Roger Lee · Boise, US
• Dennis Keller · Boise, US
• Trung T. Doan · Los Gatos, US
• Max Hineman · Boise, US
• Ren Earl · Meridian, US

Key dates

• Filing date: Jan 9, 2002
• Grant date: Feb 18, 2003
• Expiry date: Jan 9, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/10
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method of fabricating a MRAM structure and the resulting structure. The MRAM structure of the invention has the pinned layer recessed within a trench with the upper magnetic layer positioned over it. The method of MRAM fabrication utilizes a spacer processing technique, whereby the upper magnetic layer of the MRAM stack structure is formed between the region defined by the spacers, thereby allowing for self-alignment of the upper magnetic layer over the underlying pinned magnetic layer.