Punch-through via with conformal barrier liner
US6522013B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 1998 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Feb 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Punch-through vias are filled by initially depositing a thin, conformal layer of titanium nitride by chemical vapor deposition to cover an exposed upper surface of a lower metal feature, e.g. portions exposed by penetrating and undercutting an anti-reflective coating. A metal such as tungsten is subsequently deposited to fill the punch-through via. Embodiments include thermal decomposition of an organic-titanium compound, such as tetrakis-dimethylamino titanium, and treating the deposited titanium nitride in an H2/N2 plasma to lower its resistivity. Moreover, the thickness of the anti-reflective coating can be reduced and the process window for etching the via widened.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.