Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US6524167B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2000 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Oct 27, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method and composition for selective removal of a conductive material residue and a portion of the barrier layer from a substrate surface. The composition includes a chelating agent, an oxidizer, a corrosion inhibitor, abrasive particles, and water. The composition may further include one or more pH adjusting agents and/or one or more pH buffering agents. The method comprises selective removal of conductive material residue and a portion of the barrier layer from a substrate surface by applying a composition to a polishing pad, the composition including a chelating agent, an oxidizer, a corrosion inhibitor, abrasive particles, and water. The composition may further include one or more pH adjusting agents and/or one or more pH buffering agents. In one aspect, the method comprises providing a substrate comprising a dielectric layer with feature definitions formed therein, a barrier layer conformally deposited on the dielectric layer and in the feature definitions formed therein, and a copper containing material deposited on the barrier layer and filling the feature definitions formed therein, polishing the substrate to substantially remove the conductive material, and polishing the…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.