Planarization of metal container structures
US6524912B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Nov 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A conductive material is provided in an opening formed in an insulative material. The process involves first forming a conductive material over at least a portion of the opening and over at least a portion of the insulative material which is outside of the opening. Next, a metal-containing fill material is formed over at least a portion of the conductive material which is inside the opening and which is also over the insulative material outside of the opening. The metal-containing material at least partially fills the opening. At least a portion of both the metal-containing fill material and the conductive material outside of the opening is then removed. Thereafter, at least a portion of the metal-containing fill material which is inside the opening is then removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.