Semiconductor device and method of fabricating the same
US6524927B1 · kind B1 · utility
7Cited by
15References
21Claims
0Family size
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Key dates
| Filing date | Sep 7, 1999 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Sep 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A first silicon film is so formed as to extend along the inner surface of trenches 52 formed in a silicon oxide film 50, an oxide film is formed on the surface of the first silicon film, and a second amorphous silicon film is further deposited. Heat-treatment is applied to the surface of the second amorphous silicon film for seeding silicon nuclei and for promoting grain growth, and a granular silicon crystal 57 is grown from the second amorphous silicon film. In this way, the resistance of a lower electrode 59 of a capacitance device can be lowered.
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