Akira Takamatsu
18Patents
7h-index
37Co-inventors
66Inventor score
Filing activity: Jun 4, 1987 → Jun 6, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6693008B1 | Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device | Electricity | 20 | Expired |
| US6242323A | Semiconductor device and process for producing the same | Electricity | 15 | Expired |
| US6559027B2 | Semiconductor device and process for producing the sme | Electricity | 15 | Expired |
| US7074691B2 | Method of manufacturing a semiconductor integrated circuit device that includes forming dummy patterns in an isolation region prior to filling with insulating material | Electricity | 14 | Expired |
| US7208391B2 | Method of manufacturing a semiconductor integrated circuit device that includes forming an isolation trench around active regions and filling the trench with two insulating films | Electricity | 13 | Expired |
| US6057241A | Method of manufacturing a semiconductor integrated circuit device | Electricity | 13 | Expired |
| US4869201A | Apparatus for coating can barrels | Performing Operations; Transporting | 9 | Expired |
| US5951885A | Method and apparatus for generating welding pressure in a roller seam welding machine | Performing Operations; Transporting | 7 | Expired |
| US6524927B1 | Semiconductor device and method of fabricating the same | Electricity | 7 | Expired |
| US6881646B2 | Semiconductor device and process for producing the same | Electricity | 7 | Expired |
| US6562695B1 | Semiconductor integrated circuit device and method of manufacturing involving the scale-down width of shallow groove isolation using round processing | Electricity | 6 | Expired |
| US6717202B2 | HSG semiconductor capacitor with migration inhibition layer | Electricity | 5 | Expired |
| US7060589B2 | Method for manufacturing a semiconductor integrated circuit device that includes covering the bottom of an isolation trench with spin-on glass and etching back the spin-on glass to a predetermined depth | Electricity | 2 | Expired |
| US6720234B2 | Semiconductor integrated circuit device and method of manufacturing involving the scale-down width of shallow groove isolation using round processing | Electricity | 2 | Expired |
| US7402473B2 | Semiconductor device and process for producing the same | Electricity | 1 | Expired |
| US10006143B2 | Power supplying member and high-speed plating machine provided with the same | Chemistry; Metallurgy | 0 | Active |
| US10006137B2 | Holding device and high-speed plating machine provided with the same | Chemistry; Metallurgy | 0 | Active |
| US7397104B2 | Semiconductor integrated circuit device and a method of manufacturing the same | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.