High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers
US6524969B2 · kind B2 · utility
1Cited by
5References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2001 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Sep 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method for processing gallium arsenide (GaAs) wafers is provided. One embodiment of the invention provides a method for processing a substrate comprising disposing the substrate on a substrate support member in a high density plasma chemical vapor deposition chamber, depositing a film onto a surface of the substrate, and after deposition of the film, flowing a heat transfer gas in one or more channels on a substrate support surface of the substrate support member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.