Semiconductor-on-insulator body-source contact using shallow-doped source, and method
US6525381B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2000 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Mar 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6729
Abstract
A semiconductor device includes a wafer having a semiconductor layer with source, body and drain regions. A electrically-conducting region of the semiconductor region overlaps and electrically couples the source region and the body region. The electrical coupling of the source and body regions reduces floating body effects in the semiconductor device. A method of constructing the semiconductor device utilizes spacers, masking, and/or tilted implantation to form an source-body electrically-conducting region that overlaps the source and body regions of the semiconductor layer, and a drain electrically-conducting region that is within the drain region of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.