BEOL decoupling capacitor
US6525427B2 · kind B2 · utility
4Cited by
8References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2002 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Jan 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.