Temperature controlled gas feedthrough
US6527865B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2000 |
| Grant date | Mar 4, 2003 |
| Priority date | — |
| Expiry date | Aug 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6715
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. In one aspect, an apparatus and process for the control of a gas flowed through a gas feedthrough in a substrate processing chamber and system is provided. In another aspect, a deposition chamber is provided for depositing BST and other materials which require vaporization, especially low volatility precursors which are transported as a liquid to a vaporizer to be converted to vapor phase and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. The chamber comprises a series of heated temperature controlled internal liners, such as a heated gas feedthrough.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.