Device and method for suppressing space charge induced aberrations in charged-particle projection lithography systems
US6528799B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 20, 2000 |
| Grant date | Mar 4, 2003 |
| Priority date | — |
| Expiry date | Aug 10, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/887
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron beam lithographic apparatus has an electron gun providing a beam of accelerated electrons, a mask stage adapted to hold a mask in a path of the beam of accelerated electrons, and a workpiece stage adapted to hold a workpiece in a path of electrons that have passed through the mask. The electron gun has a cathode having an electron emission surface, an anode adapted to be connected to a high-voltage power supply to provide an electric field between the cathode and the anode to accelerate electrons emitted from the cathode toward the anode, and a current-density-profile control grid disposed between the anode and the cathode. The current-density-profile control grid is configured to provide an electron gun that produces an electron beam having a non-uniform current density profile. A method of producing a micro-device includes generating a beam of charged particles having a non-uniform charged-particle current density, illuminating a mask with the beam of charged particles, and exposing a workpiece with charged particles from the beam of charged particles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.