MOSFETs with differing gate dielectrics and method of formation
US6528858B1 · kind B1 · utility
84Cited by
3References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2002 |
| Grant date | Mar 4, 2003 |
| Priority date | — |
| Expiry date | Jan 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor wafer including an NMOS device and a PMOS device. The NMOS device is formed to have a high-K gate dielectric and the PMOS device is formed to have a standard-K gate dielectric. A method of forming the NMOS device and the PMOS device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.