Group III nitride compound semiconductor device
US6531719B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2001 |
| Grant date | Mar 11, 2003 |
| Priority date | — |
| Expiry date | Jun 26, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A group III nitride compound semiconductor device has a substrate, a group III nitride compound semiconductor layer having a device function, and an undercoat layer formed between the substrate and the group III nitride semiconductor layer. The undercoat layer has a surface which has a texture structure, or which is trapezoid shaped in section or which is pit shaped. In addition, a reflection layer made of nitride of at least one metal selected from the group consisting of titanium, zirconium, hafnium and tantalum may be formed on a surface of the undercoat layer. Also the surface of the reflection layer is formed as a texture structure, a trapezoid shape in section or a pit shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.