Methods for forming dielectric materials and methods for forming semiconductor devices
US6534420B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2001 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Jul 18, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments in accordance with the present invention provide methods of forming such dielectric materials, dielectric material layers and various semiconductor devices that employ such materials and layers. In general, embodiments of the present invention provide for physically vapor forming a high purity metal layer over the semiconductor substrate and after forming such a layer oxidizing the high purity metal layer to form the dielectric material employing atomic oxygen generated in a high density plasma environment. Such a dielectric material is useful in the forming of a variety of semiconductor devices such as transistors, capacitors and the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.