Continuous antifuse material in memory structure
US6534841B1 · kind B1 · utility
71Cited by
11References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2001 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Dec 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A memory structure has an antifuse material that is unpatterned and sandwiched between each of a plurality of antifuse electrode pairs. The antifuse material is continuous between the antifuse electrode pairs. Furthermore the present invention includes a memory structure comprising a plurality of antifuse electrode pairs forming a plurality of row conductors and a plurality of middle conductors in electrical communication with a plurality of control elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.