Method for cleaning and treating a semiconductor wafer after chemical mechanical polishing
US6537381B1 · kind B1 · utility
8Cited by
15References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1999 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Oct 9, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for cleaning a surface of a semiconductor wafer after a CMP operation. In one example, an improved cleaning chemical (ICC) is applied to the surface of the wafer. The ICC is configured to transform a copper film on the surface of the wafer into a water soluble form. The wafer surface is scrubbed. The wafer is then rinsed with a liquid. The scrubbing and the rinsing are configured to remove a controlled amount of the water soluble copper from the surface of the wafer and the brush, wherein the applying, the scrubbing, and the rinsing are performed in a brush box.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.