Method for making a photolithographic mask
US6537706B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2000 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Mar 14, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for making a photolithographic mask. The method comprises forming a film on a substrate that deforms the substrate, and applying a deformation reducing agent to the substrate to reduce the amount of deformation that the film caused. In a preferred embodiment, the deformation reducing agent comprises one or more films, which are formed on one side of the substrate, that balance the substrate deformation effect of one or more films that are deposited on the other side of the substrate. The film or films that constitute the deformation reducing agent may be similar to, or different from, an absorption film and/or any other films deposited on the substrate or on the absorption film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.