Ferroelectric transistor and method for fabricating it

US6538273B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Josef Willer · Riemerling, DE
• Georg Braun · Hersbruck, DE
• Till Schlosser · Dresden, DE
• Thomas Haneder · Hersbruck, DE

Key dates

• Filing date: May 4, 2001
• Grant date: Mar 25, 2003
• Expiry date: May 4, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/701

Abstract

A ferroelectric transistor is disclosed which has two source/drain regions and a channel region disposed in between in a semiconductor substrate. A metallic intermediate layer is disposed on the surface of the channel region and forms a Schottky diode with the semiconductor substrate, and a ferroelectric layer and a gate electrode are disposed on its surface. The ferroelectric transistor is fabricated using steps appertaining to silicon process technology.