Method for edge bias correction of topography-induced linewidth variation
US6539321B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2001 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Jul 17, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70625
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Method for effecting edge bias correction of topography-induced linewidth variations which are encountered in printed or integrated circuits on substrates or semiconductor devices for electronic packages. The method modifies data for current levels which is predicated on prior level data and models, as to the manner in which topography will affect the resist and/or antireflective coating (ARC) thicknesses, so as to improve upon linewidth (LW) control and, in general, imparting improved processing windows. The method can be implemented in the form of computer-executable instructions which are embodied in one or more program modules stored on computer-usable media.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.