Voltage limiting protection for high frequency power device
US6548869B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2001 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Jul 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An RF power device comprising a power transistor fabricated in a first semiconductor chip and a MOSCAP type structure fabricated in a second semiconductor chip. A voltage limiting device is provided for protecting the power transistor from input voltage spikes and is preferably fabricated in the semiconductor chip along with the MOSCAP. Alternatively, the voltage limiting device can be a discrete element fabricated on or adjacent to the capacitor semiconductor chip. By removing the voltage limiting device from the power transistor chip, fabrication and testing of the voltage limiting device is enhanced, and semiconductor area for the power device is increased and aids in flexibility of device fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.