Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques

US6551929B1 · kind B1 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Moris Kori · Palo Alto, US
• Alfred Mak · Union City, US
• Jeong Soo Byun · Cupertino, US
• Lawrence Chung-Lai Lei · Milpitas, US
• Hua Chung · San Jose, US
• Ashok Sinha · Palo Alto, US
• Ming Xi · Palo Alto, US

Key dates

• Filing date: Jun 28, 2000
• Grant date: Apr 22, 2003
• Expiry date: Jun 28, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the substrate to first and second reactive gases followed forming a bulk layer, adjacent to the nucleating layer, using CVD techniques to concurrently exposing the nucleation layer to the first and second gases.