SOI device with metal source/drain and method of fabrication
US6555879B1 · kind B1 · utility
92Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2002 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Jan 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOSFET and method of fabrication. The MOSFET includes a metal containing source and a metal containing drain; a semiconductor body having a thickness of less than about 15 nm disposed between the source and the drain and on top of an insulating layer, the insulating layer formed on a substrate; a gate electrode disposed over the body and defining a channel interposed between the source and the drain; and a gate dielectric made from a high-K material and separating the gate electrode and the body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.